Zobrazeno 1 - 10
of 211
pro vyhledávání: '"3D NAND flash memory"'
Publikováno v:
In Materials Science in Semiconductor Processing 15 March 2025 188
Publikováno v:
Eng, Vol 5, Iss 1, Pp 495-512 (2024)
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAN
Externí odkaz:
https://doaj.org/article/03b5ce7c58ee45af97067eb8d485860d
Publikováno v:
IEEE Access, Vol 12, Pp 170699-170706 (2024)
In this paper, we propose a novel String-Select-Line Separation Patterning (SSP) scheme designed for low voltage and high-speed program operation in 3D NAND flash memory structures with a separated Source-Line (SL). The proposed SSP scheme electrical
Externí odkaz:
https://doaj.org/article/7a866bd0dfd3463ca0bc445503caf734
Publikováno v:
Applied Sciences, Vol 14, Iss 15, p 6689 (2024)
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improve
Externí odkaz:
https://doaj.org/article/13e62709663e41c18cca4f6f2d2f112a
Autor:
Jae-Min Sim, In-Ku Kang, Sung-In Hong, Changhan Kim, Changhyun Cho, Kyunghoon Min, Yun-Heub Song
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 5, Iss , Pp 100073- (2023)
In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negat
Externí odkaz:
https://doaj.org/article/ae1c1d950a9a46879de5e03f422cabc2
Publikováno v:
IEEE Access, Vol 11, Pp 113704-113711 (2023)
To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeats, problems such as electrons accumulation in the inter-cell region are occurred. To solve this problem, a metho
Externí odkaz:
https://doaj.org/article/da25561f7850480ea2c4045e65a0b84d
Publikováno v:
Micromachines, Vol 14, Iss 11, p 2007 (2023)
The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the VTH of noncircular cells
Externí odkaz:
https://doaj.org/article/9c2ac228c01745649b71756b79e55f6d
Publikováno v:
IEEE Access, Vol 10, Pp 85854-85863 (2022)
The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehous
Externí odkaz:
https://doaj.org/article/962e68f12f8d4dfda19136515bf806c2
Autor:
Zhichao Du, Zhipeng Dong, Kaikai You, Xinlei Jia, Ye Tian, Yu Wang, Zhaochun Yang, Xiang Fu, Fei Liu, Qi Wang, Lei Jin, Zongliang Huo
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 98-103 (2022)
Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when
Externí odkaz:
https://doaj.org/article/4147f8e7ba79401da4e331623d19963a
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 104-108 (2022)
In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND becau
Externí odkaz:
https://doaj.org/article/56df1458283e452f92072096e2d92c43