Zobrazeno 1 - 10
of 406
pro vyhledávání: '"3D NAND flash"'
Publikováno v:
Eng, Vol 5, Iss 1, Pp 495-512 (2024)
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAN
Externí odkaz:
https://doaj.org/article/03b5ce7c58ee45af97067eb8d485860d
Autor:
Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 651-657 (2024)
In this two-part article we discuss the difference between a continuous and a discrete approach to trap modeling in the simulation of 3-D NAND Flash memories with polysilicon channel. In Part I we focus on threshold voltage $({\mathrm { V}}_{\mathrm
Externí odkaz:
https://doaj.org/article/b7afce161e184ff092a9374d9c9526b5
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 23-27 (2024)
Self-organizing Map (SOM) neural network is a prominent algorithm in unsupervised machine learning, which is widely used for data clustering, high-dimensional visualization, and feature extraction. However, the hardware implementation of SOM is limit
Externí odkaz:
https://doaj.org/article/50c97da1380d47cd8a8d943392c14e72
Publikováno v:
Applied Sciences, Vol 14, Iss 15, p 6689 (2024)
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improve
Externí odkaz:
https://doaj.org/article/13e62709663e41c18cca4f6f2d2f112a
Autor:
Kyeongrae Cho, Jeong-Sik Lee, Chanyang Park, Hyeok Yun, Hyundong Jang, Seungjoon Eom, Min Sang Park, Hyun-Chul Choi, Rock-Hyun Baek
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 12, Pp n/a-n/a (2023)
Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns. To effectively capture this co
Externí odkaz:
https://doaj.org/article/a94ec992d5914f90a1f025fa622e6dd5
Autor:
Jae-Min Sim, In-Ku Kang, Sung-In Hong, Changhan Kim, Changhyun Cho, Kyunghoon Min, Yun-Heub Song
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 5, Iss , Pp 100073- (2023)
In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negat
Externí odkaz:
https://doaj.org/article/ae1c1d950a9a46879de5e03f422cabc2
Publikováno v:
IEEE Access, Vol 11, Pp 113704-113711 (2023)
To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeats, problems such as electrons accumulation in the inter-cell region are occurred. To solve this problem, a metho
Externí odkaz:
https://doaj.org/article/da25561f7850480ea2c4045e65a0b84d
Autor:
Kihoon Nam, Chanyang Park, Hyeok Yun, Jun-Sik Yoon, Hyundong Jang, Kyeongrae Cho, Min Sang Park, Hyun-Chul Choi, Rock-Hyun Baek
Publikováno v:
IEEE Access, Vol 11, Pp 7135-7144 (2023)
A machine learning (ML) method was used to optimize the trap distribution of the charge trap nitride (CTN) to simultaneously improve its performance/reliability (P/R) characteristics, which are tradeoffs in 3-D NAND flash memories. Using an artificia
Externí odkaz:
https://doaj.org/article/3eb69a874bce4bdcbb11a9e92e3efa02
Publikováno v:
Micromachines, Vol 15, Iss 2, p 223 (2024)
The program disturbance characteristics of three-dimensional (3D) vertical NAND flash cell array architecture pose a critical reliability challenge due to the lower unselected word line (WL) pass bias (Vpass) window. In other words, the key contradic
Externí odkaz:
https://doaj.org/article/22482729d6b44d42a933082d0edd1eb9
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