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of 260
pro vyhledávání: '"2D semiconducting material"'
Akademický článek
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Group V element analogues of graphene have attracted a lot of attention recently due to their semiconducting band structures and several other interesting properties predicted by theoretical investigations in the literature. In this study, we present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78a59f1b08bebab2e84c7eae0969a7a9
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-166867
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-166867
Akademický článek
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Autor:
Seok, Joon, Young, Hee, Kumar, Sunil, Singh, Arvind, Nivedan, Anand, Kumar, Sandeep, Tondusson, Marc, Degert, Jérôme, Oberlé, Jean, Yun, Seok Joon, Lee, Young Hee, Freysz, Eric
Publikováno v:
Optics Express
Optics Express, Optical Society of America-OSA Publishing, In press, ⟨10.1364/OE.412548⟩
Optics Express, Optical Society of America-OSA Publishing, In press, ⟨10.1364/OE.412548⟩
International audience; THz conductivity of large area MoS2 and MoSe2 monolayers as well as their vertical heterostructure, MoSe2MoS2 is measured in the 0.3-5 THz frequency range. Compared to the monolayers, the ultrafast THz reflectivity of the MoSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2592::af65bb571985aef4dad6b96a0eedabfe
https://hal.archives-ouvertes.fr/hal-03095040/file/MS_OE_VF.pdf
https://hal.archives-ouvertes.fr/hal-03095040/file/MS_OE_VF.pdf
Autor:
Abidi, Irfan H., Giridhar, Sindhu Priya, Tollerud, Jonathan O., Limb, Jake, Waqar, Moaz, Mazumder, Aishani, Mayes, Edwin LH, Murdoch, Billy J., Xu, Chenglong, Bhoriya, Ankit, Ranjan, Abhishek, Ahmed, Taimur, Li, Yongxiang, Davis, Jeffrey A., Bentley, Cameron L., Russo, Salvy P., Gaspera, Enrico Della, Walia, Sumeet
Publikováno v:
Advanced Functional Materials; 9/11/2024, Vol. 34 Issue 37, p1-11, 11p
Autor:
Kim, Hyungjin1 (AUTHOR), Adinolfi, Valerio2 (AUTHOR) ziofitt@gmail.com, Lee, Sin-Hyung3 (AUTHOR) sinhlee@uos.ac.kr
Publikováno v:
Materials (1996-1944). Aug2024, Vol. 17 Issue 16, p3962. 12p.
Autor:
Lee, Sungwon, Choi, Hyungyu, Moon, Inyong, Shin, Hoseong, Watanabe, Kenji, Taniguchi, Takashi, Yoo, Won Jong
Publikováno v:
Advanced Electronic Materials; May2022, Vol. 8 Issue 5, p1-8, 8p
Autor:
Yu, Haiyang1,2 (AUTHOR), Zhang, Huibin3 (AUTHOR), Liu, Zhe2 (AUTHOR), Feng, Linrun2 (AUTHOR), Su, Yuezeng1 (AUTHOR), Li, Jinhua3 (AUTHOR) jinhua_li@hubu.edu.cn, Tang, Wei1 (AUTHOR) terry_tang@sjtu.edu.cn, Yan, Feng4 (AUTHOR) apafyan@polyu.edu.hk
Publikováno v:
Small Science. Feb2024, Vol. 4 Issue 2, p1-24. 24p.
Publikováno v:
Annalen der Physik; May2020, Vol. 532 Issue 5, p1-7, 7p
Autor:
Abidi, Irfan H., Giridhar, Sindhu Priya, Tollerud, Jonathan O., Limb, Jake, Mazumder, Aishani, Mayes, Edwin LH, Murdoch, Billy J., Xu, Chenglong, Bhoriya, Ankit, Ranjan, Abhishek, Ahmed, Taimur, Li, Yongxiang, Davis, Jeffrey A., Bentley, Cameron L., Russo, Salvy P., Della Gaspera, Enrico, Walia, Sumeet
Defects in atomically thin materials can drive new functionalities and expand applications to multifunctional systems that are monolithically integrated. An ability to control formation of defects during the synthesis process is an important capabili
Externí odkaz:
http://arxiv.org/abs/2311.07984