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pro vyhledávání: '"2D materials ferroelectricity"'
Akademický článek
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Autor:
Mircea Dragoman, Adrian Dinescu, Andrei Avram, Daniela Dragoman, Silviu Vulpe, Martino Aldrigo, Tudor Braniste, Victor Suman, Emil Rusu, Ion Tiginyanu
Publikováno v:
Nanotechnology
In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for increasing positive back-gate volt
Ferroelectric and two-dimensional materials are both heavily investigated classes of electronic materials. This is unsurprising since they both have superlative fundamental properties and high-value applications in computing, sensing etc. In this Per
Externí odkaz:
http://arxiv.org/abs/2405.05432
Publikováno v:
Nano Research; Apr2023, Vol. 16 Issue 4, p5834-5842, 9p
Autor:
Chu, Junwei, Wang, Yang, Wang, Xuepeng, Hu, Kai, Rao, Gaofeng, Gong, Chuanhui, Wu, Chunchun, Hong, Hao, Wang, Xianfu, Liu, Kaihui, Gao, Chunlei, Xiong, Jie
Publikováno v:
Advanced Materials; 2/4/2021, Vol. 33 Issue 5, p1-29, 29p
Publikováno v:
Advanced Materials; 7/23/2020, Vol. 32 Issue 29, p1-10, 10p
Publikováno v:
Nano Research; Jul2020, Vol. 13 Issue 7, p1897-1902, 6p
Publikováno v:
Advanced Materials; 8/8/2018, Vol. 30 Issue 34, p1-1, 35p
Autor:
You, Lu, Liu, Fucai, Li, Hongsen, Hu, Yuzhong, Zhou, Shuang, Chang, Lei, Zhou, Yang, Fu, Qundong, Yuan, Guoliang, Dong, Shuai, Fan, Hong Jin, Gruverman, Alexei, Liu, Zheng, Wang, Junling
Publikováno v:
Advanced Materials; 12/20/2018, Vol. 30 Issue 51, pN.PAG-N.PAG, 1p
Publikováno v:
2D Materials; Jan2018, Vol. 5 Issue 1, p1-1, 1p