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Autor:
Kovshb, A.R., Maleev, N.A., Sakharov, A.V., Moeller, C., Krestnikov, I.L., Kovsh, A.R., Mikhrin, S.S., Zhukov, A.E., Ustinov, V.M., Passenberg, W., Pawlowski, E., Kuenzel, H., Tsatsul'nikov, A.F., Ledentsov, N.N., Bimberg, D., Alferov, Z.I.
Basic development steps towards the molecular beam epitaxy growth of AlGaAs/GaAs microcavity structures are presented, which contain self-organized InAs/GaInAs quantum dots as the active medium. The emission wavelength of these structures can be cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::f9f60b8410b39bfdfe2f4685abb21cc8
https://publica.fraunhofer.de/handle/publica/200522
https://publica.fraunhofer.de/handle/publica/200522
