Zobrazeno 1 - 1
of 1
pro vyhledávání: '"015 μm GaAs pHEMT"'
Publikováno v:
IEEE Access, Vol 10, Pp 59933-59941 (2022)
The design, analysis, implementation and measurement of an integrated V-band receiver front-end based on $0.15~\mu \text{m}$ GaAs pHEMT process are presented in this paper. The front-end chip uses the super-heterodyne topology which consists of a low
Externí odkaz:
https://doaj.org/article/4634f3015eb74c78b97c25465998cec4
