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A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations

Autor: Fabian Hosenfeld, Alexander Kloes, Fabian Horst, Francois Lime, Benjamin Iniguez

Publikováno v: Solid-State Electronics

DOI: 10.1016/j.sse.2017.08.006 URL: https://www-sciencedirect-com.sabidi.urv.cat/science/article/pii/S0038110117303908?via%3Dihub Filiació URV: SI Source-to-drain (SD) tunneling decreases the device performance in MOSFETs falling below the 10 nm cha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd8eeb0a2588b1c9a52caa63279220ae
https://doi.org/10.1016/j.sse.2017.08.006

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A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs

Autor: Fernando Avila-Herrera, Antonio Cerdeira, Benjamin Iniguez, Francois Lime

Publikováno v: Solid-State Electronics

Filiació URV: SI DOI: 10.1016/j.sse.2017.02.004 URL: http://www.sciencedirect.com/science/article/pii/S0038110117301077 Memòria In this paper we provide solutions to update a long channel model in order to take into account the short channel effect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24077fa3dc59bae3850aebcfebac1430
http://hdl.handle.net/20.500.11797/PC2599

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A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

Autor: Alejandra Castro-Carranza, Oana Moldovan, Slobodan Miljakovic, Benjamin Iniguez, Antonio Cerdeira, Rodrigo Martins, Elvira Fortunato, Magali Estrada, Pedro Barquinha

Publikováno v: Solid-State Electronics
Repositori Institucional de la Universitat Rovira i Virgili
Universitat Rovira i virgili (URV)

DOI: 10.1016/j.sse.2016.09.011 URL: http://www.sciencedirect.com/science/article/pii/S003811011630140X Filiació URV: SI Inclòs a la memòria: SI An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb7ae31f1c6bd1b89e2fd3c18f96c03a

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A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations

Autor: Iñíguez, B., Hosenfeld, F., Horst, F., Kloes, A., Lime, F.

Publikováno v: Solid-State Electronics
Repositori Institucional de la Universitat Rovira i Virgili
Universitat Rovira i virgili (URV)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=RECOLECTA___::91a983ccff38d6ec07cd8c3d030a1e1d
http://hdl.handle.net/20.500.11797/PC3098

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A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs

Autor: Lime, F., Ávila-Herrera, F., Cerdeira, A., Iñiguez, B.

Publikováno v: Solid-State Electronics
Repositori Institucional de la Universitat Rovira i Virgili
Universitat Rovira i virgili (URV)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=RECOLECTA___::8607c2345c9d8e479293692457719e69
http://hdl.handle.net/20.500.11797/PC2599

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