Zobrazeno 1 - 10 of 59 354 pro vyhledávání: '"0038-1101"'
1
A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations
Autor: Fabian Hosenfeld, Alexander Kloes, Fabian Horst, Francois Lime, Benjamin Iniguez
Publikováno v: Solid-State Electronics
DOI: 10.1016/j.sse.2017.08.006 URL: https://www-sciencedirect-com.sabidi.urv.cat/science/article/pii/S0038110117303908?via%3Dihub Filiació URV: SI Source-to-drain (SD) tunneling decreases the device performance in MOSFETs falling below the 10 nm cha
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd8eeb0a2588b1c9a52caa63279220ae
https://doi.org/10.1016/j.sse.2017.08.006
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2
A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs
Autor: Fernando Avila-Herrera, Antonio Cerdeira, Benjamin Iniguez, Francois Lime
Publikováno v: Solid-State Electronics
Filiació URV: SI DOI: 10.1016/j.sse.2017.02.004 URL: http://www.sciencedirect.com/science/article/pii/S0038110117301077 Memòria In this paper we provide solutions to update a long channel model in order to take into account the short channel effect
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24077fa3dc59bae3850aebcfebac1430
http://hdl.handle.net/20.500.11797/PC2599
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3
A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors
Autor: Alejandra Castro-Carranza, Oana Moldovan, Slobodan Miljakovic, Benjamin Iniguez, Antonio Cerdeira, Rodrigo Martins, Elvira Fortunato, Magali Estrada, Pedro Barquinha
Publikováno v: Solid-State Electronics
Repositori Institucional de la Universitat Rovira i Virgili
Universitat Rovira i virgili (URV)
DOI: 10.1016/j.sse.2016.09.011 URL: http://www.sciencedirect.com/science/article/pii/S003811011630140X Filiació URV: SI Inclòs a la memòria: SI An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZ
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb7ae31f1c6bd1b89e2fd3c18f96c03a
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4
Akademický článek
Exploiting TFET-based technology for energy-efficient STT-MRAM cells.
Autor: Pérez, Santiago S.1 (AUTHOR), Bedoya, Alessandro1 (AUTHOR), Prócel, Luis Miguel1 (AUTHOR), Taco, Ramiro1 (AUTHOR) ramiro.taco@dimes.unical.it
Publikováno v: International Journal of Applied Electromagnetics & Mechanics. 2023, Vol. 73 Issue 1, p15-24. 10p.
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5
A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations
Autor: Iñíguez, B., Hosenfeld, F., Horst, F., Kloes, A., Lime, F.
Publikováno v: Solid-State Electronics
Repositori Institucional de la Universitat Rovira i Virgili
Universitat Rovira i virgili (URV)
DOI: 10.1016/j.sse.2017.08.006 URL: https://www-sciencedirect-com.sabidi.urv.cat/science/article/pii/S0038110117303908?via%3Dihub Filiació URV: SI Source-to-drain (SD) tunneling decreases the device performance in MOSFETs falling below the 10 nm cha
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=RECOLECTA___::91a983ccff38d6ec07cd8c3d030a1e1d
http://hdl.handle.net/20.500.11797/PC3098
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6
A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs
Autor: Lime, F., Ávila-Herrera, F., Cerdeira, A., Iñiguez, B.
Publikováno v: Solid-State Electronics
Repositori Institucional de la Universitat Rovira i Virgili
Universitat Rovira i virgili (URV)
Filiació URV: SI DOI: 10.1016/j.sse.2017.02.004 URL: http://www.sciencedirect.com/science/article/pii/S0038110117301077 Memòria In this paper we provide solutions to update a long channel model in order to take into account the short channel effect
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=RECOLECTA___::8607c2345c9d8e479293692457719e69
http://hdl.handle.net/20.500.11797/PC2599
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8
Akademický článek
Low noise amplifier with resistive and capacitive feedback for 2.4 GHz RF receiver front end.
Autor: Radha, S.1 (AUTHOR) radhaphd13@gmail.com, Shylu, D.S.1 (AUTHOR), Nagabushanam, P.2 (AUTHOR) nagabushanamphd14@gmail.com, Mathew, Jisha1 (AUTHOR)
Publikováno v: Journal of High Speed Networks. 2019, Vol. 25 Issue 2, p181-203. 23p.
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9
Akademický článek
Academic Search Complete Magazines and Journals.
Publikováno v: Annals of the University Dunarea de Jos of Galati: Fascicle XIV, Mechanical Engineering / Analele Universităţii "Dunărea de Jos" din Galaţi. Fascicula XIV, Inginerie Mecanică. 2011, Issue 2, p1-182. 182p. 1 Chart.
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10
Akademický článek
Academic Search Complete Magazines and Journals.
Publikováno v: Annals of the University Dunarea de Jos of Galati: Fascicle XIV, Mechanical Engineering / Analele Universităţii "Dunărea de Jos" din Galaţi. Fascicula XIV, Inginerie Mecanică. 2011, Issue 1, p1-182. 182p. 1 Chart.
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