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pro vyhledávání: '"김홍렬 ( Hong Yeol Kim )"'
Publikováno v:
Korean Chemical Engineering Research. 49:297-300
High energy proton irradiations were performed on graphene devices to increase the number of defects intentionally. Proton energy and fluence were 6 MeV and , respectively. The defects in few layer graphene layer created by proton irradiations captur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ec58be1012241b51bda3378ab90be54
https://doi.org/10.9713/kcer.2011.49.3.297
https://doi.org/10.9713/kcer.2011.49.3.297
