Zobrazeno 1 - 8
of 8
pro vyhledávání: '"黄志锋"'
Publikováno v:
Zhongshan Daxue xuebao. Yixue kexue ban, Vol 23 (2002)
【目的】探讨转移相关基因CD44 和nm23 在预测葡萄胎恶变和滋养细胞肿瘤转移潜能的意义。【方法】采用SP 免疫组织化学法检测30 例葡萄胎新鲜标本和57 例滋养细胞疾病石蜡标本中CD44v6 和nm23
Externí odkaz:
https://doaj.org/article/0ea5e9060359474a8eec14492699a736
Publikováno v:
Application Research of Computers / Jisuanji Yingyong Yanjiu. Feb2024, Vol. 41 Issue 2, p450-458. 9p.
Publikováno v:
Information & Control; Dec2023, Vol. 52 Issue 6, p747-722, 12p
Autor:
黄志锋
Publikováno v:
Guangdong Architecture Civil Engineering; Nov2022, Vol. 29 Issue 11, p85-115, 3p
Publikováno v:
Guangdong Architecture Civil Engineering; 2020, Vol. 27 Issue 10, p1-22, 5p
Publikováno v:
Guangdong Architecture Civil Engineering; Sep2020, Vol. 27 Issue 9, p1-15, 4p
Autor:
Chih-Feng Huang, 黃誌鋒
95
As the evolution of the CMOS technology beyond the 45 nm technology node, poly-silicon gate encounters several inherent limitations – poly-Si depletion, boron penetration, and high resistivity. It becomes urgent to seek replacements for the
As the evolution of the CMOS technology beyond the 45 nm technology node, poly-silicon gate encounters several inherent limitations – poly-Si depletion, boron penetration, and high resistivity. It becomes urgent to seek replacements for the
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/32453138594163038862
Autor:
Chih-Feng Huang, 黃誌鋒
89
This thesis investigated the work function adjustability of TaNx films and the flat-band voltage stability of TaN-, Ta-, and Pt-gate MOS devices. The Cu barrier of TaNx films is also examined. The TaNx films were deposited by reactive sputter
This thesis investigated the work function adjustability of TaNx films and the flat-band voltage stability of TaN-, Ta-, and Pt-gate MOS devices. The Cu barrier of TaNx films is also examined. The TaNx films were deposited by reactive sputter
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/27498520724487321625