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pro vyhledávání: '"黃麟淯"'
Autor:
Huang, Lin-Yu, 黃麟淯
104
Plasmon-induced potential fluctuation is a key limiting factor for device scaling. To evidence such fluctuation and correctly model it, we first simulated a highly doped P-N junction: Esaki tunnel diode by examining its current-voltage chara
Plasmon-induced potential fluctuation is a key limiting factor for device scaling. To evidence such fluctuation and correctly model it, we first simulated a highly doped P-N junction: Esaki tunnel diode by examining its current-voltage chara
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/g3qtm8
