Zobrazeno 1 - 10
of 10
pro vyhledávání: '"马春阳"'
Publikováno v:
Chinese Journal of Tissue Engineering Research / Zhongguo Zuzhi Gongcheng Yanjiu; 6/18/2024, Vol. 28 Issue 17, p2702-2707, 6p
Publikováno v:
Applied Chemical Industry. Dec2021, Vol. 50 Issue 12, p3515-3518. 4p.
Publikováno v:
Journal of Functional Materials / Gongneng Cailiao. 1/30/2020, Vol. 51 Issue 1, p01126-01130. 5p.
Publikováno v:
Journal of Functional Materials / Gongneng Cailiao. 2018, Vol. 49 Issue 6, p6093-6096. 4p.
Publikováno v:
China Tropical Medicine; May2022, Vol. 22 Issue 5, p440-444, 5p
Publikováno v:
Chinese Journal of Medical Instrumentation / Zhongguo Yiliao Qixie Zazhi; 2021, Vol. 45 Issue 5, p483-486, 4p
Publikováno v:
Journal of Harbin Institute of Technology. Social Sciences Edition / Haerbin Gongye Daxue Xuebao. Shehui Kexue Ban; 2018, Vol. 50 Issue 1, p50-58, 9p
Publikováno v:
Journal of Functional Materials / Gongneng Cailiao; 2018, Vol. 49 Issue 1, p06093-06096, 4p
Publikováno v:
Chinese Journal of Lasers. 43:0801003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::951e2e4fcd35b04ca5fd8fd5112569b5
https://doi.org/10.3788/cjl201643.0801003
https://doi.org/10.3788/cjl201643.0801003
Autor:
Chun-Yang Ma, 馬春陽
93
Zinc Oxide (ZnO) with the material character of wide and direct bandgap is one of the most potential materials for the development of the optoelectronics. The crystalline ZnO is naturally an n-type semiconductor. However, for the development
Zinc Oxide (ZnO) with the material character of wide and direct bandgap is one of the most potential materials for the development of the optoelectronics. The crystalline ZnO is naturally an n-type semiconductor. However, for the development
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/38520562461743870918
