Zobrazeno 1 - 10
of 11
pro vyhledávání: '"飽和溶融帯移動法"'
Autor:
Adachi, Satoshi, Ogata, Yasuyuki, Yoshizaki, Izumi, Matsumoto, Satoshi, Koshikawa, Naokiyo, Takayanagi, Masahiro, Kinoshita, Kyoichi, Yoda, Shinichi
Publikováno v:
宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :21-32
In order to investigate suitable ampoule configuration for crystal growth experiments under microgravity for obtaining homogeneous crystals, theoretical modeling and numerical simulation are carried out. From the model, a new index named the two-dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::eeaf013067852ac165225d2dd0ed1496
http://id.nii.ac.jp/1696/00006086/
http://id.nii.ac.jp/1696/00006086/
Autor:
Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Yoda, Shinichi
Publikováno v:
宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :7-12
We have succeeded in scaling up of platy In(0.1)Ga(0.9)As single crystals grown by the traveling liquidus-zone (TLZ) method from 10 to 20 mm in width without deteriorating compositional uniformity. The TLZ method which we have invented for growing ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::ae8ef22777875234efa4380df43b8a0c
http://id.nii.ac.jp/1696/00006084/
http://id.nii.ac.jp/1696/00006084/
Autor:
Miyata, Hiroaki, Ogata, Yasuyuki, Adachi, Satoshi, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi, Odawara, Osamu, Yoda, Shinichi
Publikováno v:
宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :13-20
In the growth of In(0.3)Ga(0.7)As single crystals, polycrystallization at the initial interface with lattice-mismatched seeds is a major problem because no homogeneous In(0.3)Ga(0.7)As seed crystals have been obtained and usually GaAs crystals are us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::77c3e0ba36bfea53fa2e95856c48e7f9
http://id.nii.ac.jp/1696/00006085/
http://id.nii.ac.jp/1696/00006085/
Autor:
Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Ogata, Yasuyuki, Kinoshita, Kyoichi, Adachi, Satoshi, Yoda, Shinichi, Arai, Masakazu, Watanabe, Takao, Kondo, Yasuhiro
Publikováno v:
宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :1-6
We grew compositionally homogeneous platy single crystals of In(0.1)Ga(0.9)As composition by the Traveling Liquidus Zone (TLZ) method. We also fabricated In(x)Ga(1-x)As-SQWs on the In(0.1)Ga(0.9)As substrate by the Metal Organic Vapor Epitaxy (MOVPE)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::8fb4aa58c59b35d3d8cf880a2d42359e
http://id.nii.ac.jp/1696/00006083/
http://id.nii.ac.jp/1696/00006083/
Autor:
Adachi, Satoshi, Ogata, Yasuyuki, Matsumoto, Satoshi, Koshikawa, Naokiyo, Takayanagi, Masahiro, Yoda, Shinichi, Kinoshita, Kyoichi
Publikováno v:
宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :28-32
In order to estimate a diffusion coefficient, an InAs mole fraction profile, which is obtained by numerical simulation, is compared with a profile, which is experimentally obtained. The simulation result agrees well with the experimentally obtained p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::f296945a46de4b734e718b20f0729638
http://id.nii.ac.jp/1696/00002360/
http://id.nii.ac.jp/1696/00002360/
Autor:
Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Koshikawa, Naokiyo, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Yoda, Shinichi
Publikováno v:
宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :14-20
The TLZ method is a new crystal growth method which has been invented for the growth of homogeneous mixed crystals. The influence of convection in a melt on the compositional homogeneity of TLZ-grown In(x)Ga(1-x)As crystals was investigated by the gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::cf5a9afe9c521eb40c144d96fb4533b0
http://id.nii.ac.jp/1696/00002358/
http://id.nii.ac.jp/1696/00002358/
Autor:
Adachi, Satoshi, Ogata, Yasuyuki, Matsumoto, Satoshi, Koshikawa, Naokiyo, Takayanagi, Masahiro, Yoda, Shinichi, Kinoshita, Kyoichi
Publikováno v:
宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :21-27
In order to investigate the two-dimensionality in the traveling liquidus-zone (TLZ) method, the two-dimensional TLZ model is introduced. Basing on the two-dimensional model, the two-dimensionality is defined. From the numerical results in various sam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::ec6a06eed46fc3b8b764d576cabda867
http://id.nii.ac.jp/1696/00002359/
http://id.nii.ac.jp/1696/00002359/
Autor:
Miyata, Hiroaki, Ogata, Yasuyuki, Kinoshita, Kyoichi, Adachi, Satoshi, Yoda, Shinichi, Tsuru, Tetsuya, Muramatsu, Yuji
Publikováno v:
宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :7-13
The Si(0.5)Ge(0.5) bulk crystals growth has been challenged. Si-Ge homogeneous single crystals are difficult to grow so far. In the present research, the Traveling Liquidus-Zone method (TLZ method) which was invented in the group as a new crystal gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::01edf515b9127a13e2a31261a46cd867
http://id.nii.ac.jp/1696/00002357/
http://id.nii.ac.jp/1696/00002357/
Autor:
Kinoshita, Kyoichi, Ueda, Toshiaki, Adachi, Satoshi, Arai, Yasutomo, Miyata, Hiroaki, Tanaka, Ryota, Muramatsu, Yuji, Yoda, Shinichi
Publikováno v:
宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report.
We have succeeded in growing large and high quality platy In(x)Ga(1-x)As (x: 0.1-0.13) single crystals by the Traveling Liquidus-Zone (TLZ) method. Among factors which affect crystal quality, the most influential factor is temperature stability at th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::ae13335f5c2ecaf4316a95e4f8b9449f
http://id.nii.ac.jp/1696/00002215/
http://id.nii.ac.jp/1696/00002215/
Publikováno v:
宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report.
For growing compositionally homogeneous alloy crystals, mass balance between segregation and transportation at the growth interface is required, that is, just the same amount of rejected solute by segregation should be transported away from the inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::220c14ba553e065ecbde72c7a3fbfc03
http://id.nii.ac.jp/1696/00002356/
http://id.nii.ac.jp/1696/00002356/