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pro vyhledávání: '"陳衍凱"'
Autor:
Yan-Kai Chen, 陳衍凱
95
Continuous scaling of the memory device has been a challenging task. Phase change memory (PCM) is a potential candidate for next generation non-volatile memory. The advantages of PCM including better scalability, rewritability, high speed whi
Continuous scaling of the memory device has been a challenging task. Phase change memory (PCM) is a potential candidate for next generation non-volatile memory. The advantages of PCM including better scalability, rewritability, high speed whi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/46602274971114523668
