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pro vyhledávání: '"陳國照"'
Autor:
Guo-zhao Chen, 陳國照
93
We have successfully used heat retaining layer enhanced crystallization technology when excimer laser annealing we can achieve that the fully lateral grain growth silicon island of 14um long. Then we combine the fully lateral grain growth sil
We have successfully used heat retaining layer enhanced crystallization technology when excimer laser annealing we can achieve that the fully lateral grain growth silicon island of 14um long. Then we combine the fully lateral grain growth sil
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/88292433798810962699
