Zobrazeno 1 - 2
of 2
pro vyhledávání: '"陳南菁"'
Autor:
CHEN, NAN-CHING, 陳南菁
84
The work study the use of Co salicide technology on p+ poly gate by using ITS technology to suppress the boron penetration. Silicide films with thicknesses of 150,300 and 450A were studied in this thesis.The influence of temperature on sheet
The work study the use of Co salicide technology on p+ poly gate by using ITS technology to suppress the boron penetration. Silicide films with thicknesses of 150,300 and 450A were studied in this thesis.The influence of temperature on sheet
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/05688876683380583100
