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pro vyhledávání: '"陳利傑"'
Autor:
Li-Chieh Chen, 陳利傑
91
Metal-ferroelectric-insulator-semiconductor field effect transistors (MFISFETs) using an Al/Pb(Zr0.53,Ti0.47)O3 (PZT)/HfO2/Si structure were successfully fabricated. The threshold voltage is 1.51 V and the electron mobility is 20 cm2/V-s. The
Metal-ferroelectric-insulator-semiconductor field effect transistors (MFISFETs) using an Al/Pb(Zr0.53,Ti0.47)O3 (PZT)/HfO2/Si structure were successfully fabricated. The threshold voltage is 1.51 V and the electron mobility is 20 cm2/V-s. The
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/60520683890742024059
