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Autor:
Jin-Yi Tan, 陳井一
102
Recently, GaN-based wide bandgap light emitting diodes (LEDs) have been intensively developed and put applications in solid-state lighting and communication due to its superior optical and electrical characteristics. The InGaN/GaN nanorod li
Recently, GaN-based wide bandgap light emitting diodes (LEDs) have been intensively developed and put applications in solid-state lighting and communication due to its superior optical and electrical characteristics. The InGaN/GaN nanorod li
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/03406330662480069833