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Autor:
宋京 Song Jing, 王文新 Wang Wen-xin, 徐培强 Xu Pei-qiang, 陈耀 Chen Yao, 陈弘 Chen Hong, 马紫光 Ma Zi-guang, 江洋 Jiang Yang, 黎艳 Li Yan
Publikováno v:
Chinese Journal of Luminescence. 32:896-901
GaN is considered as a promising material for high power,high temperature and high frequency microwave applications,due to the wide band gap,high thermal stability and high breakdown voltage.Due to lack of suited homosubstrates,GaN is currently grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e27208231c9d6482bd1a2588380511
https://doi.org/10.3788/fgxb20113209.0896
https://doi.org/10.3788/fgxb20113209.0896
