Zobrazeno 1 - 10
of 20
pro vyhledávání: '"陈子平"'
Publikováno v:
Renmin Zhujiang, Vol 25 (2004)
Externí odkaz:
https://doaj.org/article/a24103c5aefc4b31af42f71e8aeedc03
Autor:
CHEN,TZU-PING, 陳子平
104
Since the twentieth century, multiple percussion's solo pieces are too numerous to mention individually. One denomination of them works with “spatial notation” and “graphic notation”, which give the performers considerable space on i
Since the twentieth century, multiple percussion's solo pieces are too numerous to mention individually. One denomination of them works with “spatial notation” and “graphic notation”, which give the performers considerable space on i
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/3269s3
Autor:
TZU PIN CHEN, 陳子平
100
This study explores disposition effect for Taiwanese mutual fund investors by examining the long-term performance of efficient investing method using the overseas mutual funds profolios which the customers of Bank F invested most from 2001-2
This study explores disposition effect for Taiwanese mutual fund investors by examining the long-term performance of efficient investing method using the overseas mutual funds profolios which the customers of Bank F invested most from 2001-2
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/83753657423435804761
Autor:
Tzu-Ping Chen, 陳子平
91
With the great impact of globalization, multinational corporations(MNCs) have to encounter the dilemmas of global integration and local responsiveness. The factors on the subsidiary’s market, employees’ multi-nationalities and local cultu
With the great impact of globalization, multinational corporations(MNCs) have to encounter the dilemmas of global integration and local responsiveness. The factors on the subsidiary’s market, employees’ multi-nationalities and local cultu
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/13347290544097411902
Autor:
Zi-Ping Chen, 陳子平
87
A scale down theorem for an ultra-thin film SOI (Silicon-On-Insulator) MOSFET is studied in this thesis. First, we build an improved analytical model of the threshold voltage shifting and subthreshold factor with consideration about Vds bias
A scale down theorem for an ultra-thin film SOI (Silicon-On-Insulator) MOSFET is studied in this thesis. First, we build an improved analytical model of the threshold voltage shifting and subthreshold factor with consideration about Vds bias
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/00362551250350635993
Publikováno v:
Court Case Times; Apr2016, Issue 46, p134-154, 21p