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pro vyhledávání: '"阮建龍"'
Autor:
Jian-LongRuan, 阮建龍
101
As semiconductor device technology approached the deep sub-micron process requirements, copper has replaced aluminum in the interconnect metallization due to its excellent electrical conductivity and superior electromigration resistance as c
As semiconductor device technology approached the deep sub-micron process requirements, copper has replaced aluminum in the interconnect metallization due to its excellent electrical conductivity and superior electromigration resistance as c
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/62270239986943490235
Autor:
Jian-Long Ruan, 阮建龍
92
As semiconductor device technology approached the deep sub-micron process requirements, copper has replaced aluminum in the interconnect metallization due to its good electrical conductivity and excellent resistance of electromigration. Howev
As semiconductor device technology approached the deep sub-micron process requirements, copper has replaced aluminum in the interconnect metallization due to its good electrical conductivity and excellent resistance of electromigration. Howev
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/99798413904407583227