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Autor:
Wei- Bin Cheng, 鄭偉繽
97
We report the fabrication and characteristics of field-effect Transistor (FET) and metal-semiconductor-metal photodetectors (MSM PDs) with selectively grown ZnO-Based nanobridges. The ZnO seed layer was deposited by radio frequency magnetron
We report the fabrication and characteristics of field-effect Transistor (FET) and metal-semiconductor-metal photodetectors (MSM PDs) with selectively grown ZnO-Based nanobridges. The ZnO seed layer was deposited by radio frequency magnetron
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/mdtxa3
