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pro vyhledávání: '"郭正聞"'
Autor:
Kuo, Cheng-Wen, 郭正聞
95
In this thesis, we demonstrate an optimum strained-Si structure based on SiGe virtual substrate, and display significant enhancement in transistor performance. The trade-off between electron mobility enhancement and short channel effect (SCE)
In this thesis, we demonstrate an optimum strained-Si structure based on SiGe virtual substrate, and display significant enhancement in transistor performance. The trade-off between electron mobility enhancement and short channel effect (SCE)
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/13654536020028183333
