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pro vyhledávání: '"郭丞竣"'
Autor:
Cheng-Chun Kuo, 郭丞竣
107
In this thesis, we proposed a new Double-Gate (DG) PN-type tunneling field-effect transistor with exploiting induced channel layer (iTFETs) for line tunneling and low power applications. Unlike conventional TFET, with same type of doping in
In this thesis, we proposed a new Double-Gate (DG) PN-type tunneling field-effect transistor with exploiting induced channel layer (iTFETs) for line tunneling and low power applications. Unlike conventional TFET, with same type of doping in
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/ytnqxc
