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pro vyhledávání: '"遲萬瑋"'
Autor:
Chih,WAN-WEi, 遲萬瑋
106
Resistive random access memory (RRAM) with a simple metal/insulator/metal (MIM) structure can be reversibly switched between a high-resistance state and a low-resistance state by voltage singles. Although RRAM is a promising candidate for th
Resistive random access memory (RRAM) with a simple metal/insulator/metal (MIM) structure can be reversibly switched between a high-resistance state and a low-resistance state by voltage singles. Although RRAM is a promising candidate for th
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/k6s4q8
