Zobrazeno 1 - 6
of 6
pro vyhledávání: '"赵力强"'
Publikováno v:
Journal of Hydrobiology / Shuisheng Shengwu Xuebao; Nov2023, Vol. 47 Issue 11, p1762-1768, 7p
Publikováno v:
Application Research of Computers / Jisuanji Yingyong Yanjiu. Nov2017, Vol. 34 Issue 11, p3405-3415. 4p.
Autor:
HU Wenfeng, null 胡文峰, null 王乃昂, null 赵力强, null 宁凯, null 张洵赫, null 孙杰, WANG Nai'ang, ZHAO Liqiang, NING Kai, ZHANG Xunhe, SUN Jie
Publikováno v:
地理科学进展. 34:1061-1071
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd317160f0c587b995a3e27455b3b0e6
https://doi.org/10.18306/dlkxjz.2015.08.013
https://doi.org/10.18306/dlkxjz.2015.08.013
Publikováno v:
Arid Zone Research / Ganhanqu Yanjiu; 9/15/2020, Vol. 37 Issue 5, p1215-1222, 8p
Autor:
闫喜武 Yan Xiwu, 王连顺 Wang Lianshun, 丁鉴锋 Ding Jianfeng, 包鹏云 Bao Pengyun, 赵力强 Zhao Liqiang, 杨凤 Yang Feng
Publikováno v:
Acta Ecologica Sinica. 33:5419-5425
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a988ad610ee312f2804bb4838bda0d6
https://doi.org/10.5846/stxb201206250890
https://doi.org/10.5846/stxb201206250890
Autor:
Chao, Li-Chiang, 趙力強
102
The thesis reports the design and fabrication of 4H-SiC bipolar devices including p-i-n diodes and bipolar junction transistors. Conventional 4H-SiC p-i-n diodes suffers from a reliability problem called bipolar degradation. It is believed t
The thesis reports the design and fabrication of 4H-SiC bipolar devices including p-i-n diodes and bipolar junction transistors. Conventional 4H-SiC p-i-n diodes suffers from a reliability problem called bipolar degradation. It is believed t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/mrde8d
