Zobrazeno 1 - 10
of 31
pro vyhledávání: '"许镇"'
Publikováno v:
智能科学与技术学报, Vol 3, Iss 4, Pp 444-448 (2021)
多智能体协同在众多领域逐渐得到应用,但是还有很多仍未解决的问题。为此,研究了基于无模型自适应动态规划(MFADP)的未知异构多智能体系统同步控制问题,其中领航者智能体和追随
Externí odkaz:
https://doaj.org/article/18f6f7ac77b64f92b78392e620dd99c6
Publikováno v:
Journal of New Medicine. Apr2023, Vol. 54 Issue 4, p287-293. 7p.
Publikováno v:
Shipin Kexue/ Food Science; 2024, Vol. 45 Issue 1, p217-224, 8p
Publikováno v:
Journal of Nanjing University of Information Science & Technology (Natural Science Edition) / Nanjing Xinxi Gongcheng Daxue Xuebao (ziran kexue ban). Mar2020, Vol. 12 Issue 2, p135-149. 15p.
Autor:
张裕 Zhang Yu, 连洁 Lian Jie, 魏铭洋 Wei Mingyang, 姜清芬 Jiang Qingfen, 王宸琳 Wang Chenlin, 王月明 Wang Yueming, 许镇 Xu Zhen
Publikováno v:
Laser & Optoelectronics Progress. 59:1000001
Publikováno v:
Journal of Natural Disasters; Dec2021, Vol. 30 Issue 6, p21-31, 11p
Publikováno v:
Shipin Kexue/ Food Science; 2021, Vol. 42 Issue 8, p264-269, 6p
Autor:
魏铭洋 Wei Mingyang, 连洁 Lian Jie, 姜清芬 Jiang Qingfen, 张裕 Zhang Yu, 王宸琳 Wang Chenlin, 王月明 Wang Yueming, 许镇 Xu Zhen
Publikováno v:
Chinese Journal of Lasers. 48:1203002
Autor:
HSU, CHEN-HSIEN, 許鎮獻
106
Semiconductor device scaling down induces on increase of aspect ratio. The gap-fill capability of thin film deposition becomes a critical technique for copper interconnect fabrication. Due to poor deposition coverage of the conventional sput
Semiconductor device scaling down induces on increase of aspect ratio. The gap-fill capability of thin film deposition becomes a critical technique for copper interconnect fabrication. Due to poor deposition coverage of the conventional sput
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/a2w34x