Zobrazeno 1 - 3
of 3
pro vyhledávání: '"许天亮"'
Publikováno v:
Chinese Nursing Research; Oct2023, Vol. 37 Issue 20, p3761-3765, 5p
Autor:
Hsu,Tien-Liang, 許天亮
104
AlGaN/GaN power transistors, compared to conventional silicon-based transistors, have characteristics of high electron mobility, high breakdown voltage, suitable for operating at high power and high frequency conductions. Temperature has sig
AlGaN/GaN power transistors, compared to conventional silicon-based transistors, have characteristics of high electron mobility, high breakdown voltage, suitable for operating at high power and high frequency conductions. Temperature has sig
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/gw6937
Publikováno v:
Chinese Nursing Research; Sep2019, Vol. 33 Issue 18, p3261-3263, 3p