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Autor:
HSU, CHEN-HSIEN, 許鎮獻
106
Semiconductor device scaling down induces on increase of aspect ratio. The gap-fill capability of thin film deposition becomes a critical technique for copper interconnect fabrication. Due to poor deposition coverage of the conventional sput
Semiconductor device scaling down induces on increase of aspect ratio. The gap-fill capability of thin film deposition becomes a critical technique for copper interconnect fabrication. Due to poor deposition coverage of the conventional sput
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/a2w34x
