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Autor:
YEN-YU HSU, 許延有
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Recently, studies on the effects of doping rare-earth(RE) elements on Ⅲ-Ⅴ compound semiconductors have sttacted much attention since these elements, such as Yb, Gd, and Er exhibit impurity gettering effect due to their strong affinity to
Recently, studies on the effects of doping rare-earth(RE) elements on Ⅲ-Ⅴ compound semiconductors have sttacted much attention since these elements, such as Yb, Gd, and Er exhibit impurity gettering effect due to their strong affinity to
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/57076318806003482934
