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pro vyhledávání: '"藩紅都"'
Autor:
PHAN, HONG DO, 藩紅都
107
While the scaling-down issue of Si complementary metal oxide semiconductor (CMOS) devices has reached a critical point, the growth of III-V compound semiconductors, especially InxGa1-xSb materials, on GaAs or Si substrates has been considere
While the scaling-down issue of Si complementary metal oxide semiconductor (CMOS) devices has reached a critical point, the growth of III-V compound semiconductors, especially InxGa1-xSb materials, on GaAs or Si substrates has been considere
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/yvp2bv
