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Publikováno v:
Journal of Modern Medicine & Health. 11/30/2022, Vol. 38 Issue 22, p3828-3831. 4p.
Autor:
Chin-Hsia Tsai, 蔡錦霞
89
Deep level transient spectroscopy measurements were performed to study the defects in proton-irradiated GaInP, grown by MOCVD. By using schottky structure, majority carrier traps can be observed. We use 200 keV, proton irraiation with a flu
Deep level transient spectroscopy measurements were performed to study the defects in proton-irradiated GaInP, grown by MOCVD. By using schottky structure, majority carrier traps can be observed. We use 200 keV, proton irraiation with a flu
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/01946514907305150282