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pro vyhledávání: '"蔡子儀"'
Autor:
Tsai, Tzu-I, 蔡子儀
102
In this dissertation, we have developed a novel double-patterning (DP) technique for generation of gate patterns with gate length down to 80 nm using only a conventional I-line stepper. With a modification in the process steps, this DP techn
In this dissertation, we have developed a novel double-patterning (DP) technique for generation of gate patterns with gate length down to 80 nm using only a conventional I-line stepper. With a modification in the process steps, this DP techn
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/28893693875539825696
Autor:
Tzu-I Tsai, 蔡子儀
95
In this thesis, the effects of both the Si3N4 layer capping over the gate and the hydrogen-blocked TEOS buffer layer inserted prior to the Si3N4 deposition, on the NMOS device characteristics as well as the correlative hot-electron degradatio
In this thesis, the effects of both the Si3N4 layer capping over the gate and the hydrogen-blocked TEOS buffer layer inserted prior to the Si3N4 deposition, on the NMOS device characteristics as well as the correlative hot-electron degradatio
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/73745391359072300590