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pro vyhledávání: '"董承瑋"'
Autor:
Cheng-Wei Tung, 董承瑋
99
In this thesis, the resistance switching characteristic of Zn:SiO2 -based memory was studied. The resistive memory was fabricated by sputtering to deposit the Metal/Insulator/Metal (MIM) structure. The top and bottom layers were made by Pt an
In this thesis, the resistance switching characteristic of Zn:SiO2 -based memory was studied. The resistive memory was fabricated by sputtering to deposit the Metal/Insulator/Metal (MIM) structure. The top and bottom layers were made by Pt an
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/14973821867573283320
