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pro vyhledávání: '"葉禹翔"'
Autor:
Yeh, Yu-Hsiang, 葉禹翔
107
In this thesis, we use the Sentaurus TCAD simulation to explore the impact of the structural parameters on the electrical characteristics of T-gate devices. The effects and trade-off between using source/drain (S/D) overlapping and underlapp
In this thesis, we use the Sentaurus TCAD simulation to explore the impact of the structural parameters on the electrical characteristics of T-gate devices. The effects and trade-off between using source/drain (S/D) overlapping and underlapp
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/hbk498
