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pro vyhledávání: '"范姜群名"'
Autor:
Chun-Ming FanChiang, 范姜群名
104
Three-dimensional topological insulator Bi2Se3 has natural Se vacancy and causes high intrinsic n-type carrier concentration. In order to research the surface state, we doped Sb into Bi2Se3 to tune down the carrier concentration. We successf
Three-dimensional topological insulator Bi2Se3 has natural Se vacancy and causes high intrinsic n-type carrier concentration. In order to research the surface state, we doped Sb into Bi2Se3 to tune down the carrier concentration. We successf
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/13088475007649648499
