Zobrazeno 1 - 4
of 4
pro vyhledávání: '"范大伟"'
Publikováno v:
Systems Engineering & Electronics; Dec2023, Vol. 45 Issue 12, p3984-3994, 11p
Autor:
Da-Wei Fan, 范大偉
97
InAs/AlSb high electron mobility transistor has great promise in high speed and low power applications. However, two drawbacks observed in the devices are closely associated with type II band line-up and small bandgap InAs channel. One is ban
InAs/AlSb high electron mobility transistor has great promise in high speed and low power applications. However, two drawbacks observed in the devices are closely associated with type II band line-up and small bandgap InAs channel. One is ban
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/11053001041001288412
Autor:
Da-Wei Fan, 范大偉
87
Hidden terminal interference degrades the system performance and increases the average packet delay time in multihop wireless networks. This work presents a cluster-based code assignment technique to avoid hidden terminal interference. The pr
Hidden terminal interference degrades the system performance and increases the average packet delay time in multihop wireless networks. This work presents a cluster-based code assignment technique to avoid hidden terminal interference. The pr
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/60064546723355310569
Publikováno v:
Journal of Earth Sciences & Environment; May2016, Vol. 38 Issue 3, p341-354, 14p