Zobrazeno 1 - 9
of 9
pro vyhledávání: '"翁 暄"'
Publikováno v:
Journal of Research in Education Sciences, Vol 67, Iss 3, Pp 1-35 (2022)
本研究旨在探究1980～2020年國際師資培育研究的知識結構與趨勢，運用文獻計量法，分析高頻率出現作者、文獻知識聚類及突現詞探尋研究趨勢，以瞭解師資培育研究在不同時間序列中所關
Externí odkaz:
https://doaj.org/article/762bab34ca0a499c90b17c9c9b952a9f
Publikováno v:
Bulletin of Soil & Water Conservation; Jun2024, Vol. 44 Issue 3, p136-144, 9p
Autor:
翁暄睿 Hsuan-Jui Weng, 陳慧綺 Wai-Chi Chan
Publikováno v:
Shizi Peiyu Yu Jiaoshi Zhuanye Fazhan Qikan, Vol 13, Iss 3, Pp 113-138 (2020)
本研究旨在探究國民小學教師專業學習社群、正向心理資本與教師教學創新之間的現況與關係。在研究方法上採用問卷調查法，研究對象為臺灣地區國民小學教師，並使用描述統計、積差相
Externí odkaz:
https://doaj.org/article/019dd88e994143d48eb578aba10d0257
Publikováno v:
Journal of Research in Education Sciences; Sep2022, Vol. 67 Issue 3, p1-35, 35p
Autor:
Weng, Hsuan-Jui, 翁暄睿
106
It is an important factor for the students learning achievement level that principal flipping leadership and teacher teaching innovation.The purpose of this research is to investigate the current status and interrelationship of principal fli
It is an important factor for the students learning achievement level that principal flipping leadership and teacher teaching innovation.The purpose of this research is to investigate the current status and interrelationship of principal fli
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/z84322
Publikováno v:
School Administrators; 2019, Issue 124, p1-20, 20p
Autor:
翁暄琳
101
Embedding quantum dots in the i-region of the GaAs p-i-n solar cells(SC), we change the quantum dot parameters one at a time to understand how does quantum dot affect the performance of quantum dot solar cells(QDSC).First, we construct the m
Embedding quantum dots in the i-region of the GaAs p-i-n solar cells(SC), we change the quantum dot parameters one at a time to understand how does quantum dot affect the performance of quantum dot solar cells(QDSC).First, we construct the m
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/86133479040639296623
Autor:
Hsuan-Mei Weng, 翁暄美
98
In order to reduce the photo-generated carriers recombination loss in the intrinsic absorption layer of the silicon thin-film p-i-n solar cells. In this study, the influence of linearly graded band-gap structure of hydrogenated amorphous sili
In order to reduce the photo-generated carriers recombination loss in the intrinsic absorption layer of the silicon thin-film p-i-n solar cells. In this study, the influence of linearly graded band-gap structure of hydrogenated amorphous sili
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/71466287773080845732