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pro vyhledávání: '"翁扬凯"'
Publikováno v:
Computer Measurement & Control; Mar2023, Vol. 31 Issue 3, p36-42, 7p
Autor:
Yang-Kai Weng, 翁揚凱
90
To fabricate devices with better electrical and optical characteristics using low ohmic contact resistivity, heavily doped GaAs is required. Germanium is an ideal dopant for LPE because of its low vapor pressure. In this paper, we report on t
To fabricate devices with better electrical and optical characteristics using low ohmic contact resistivity, heavily doped GaAs is required. Germanium is an ideal dopant for LPE because of its low vapor pressure. In this paper, we report on t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/36962312061718086188
