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pro vyhledávání: '"羅傳煜"'
Autor:
Chuan-Yu Luo, 羅傳煜
93
The In0.1Ga0.9N/In0.02Ga0.98N LD structures using quaternary InAlGaN with variant Al and In compositions as electronic blocking layers are numerically investigated. Varying the aluminum (Al) composition in InAlGaN electronic blocking layer wi
The In0.1Ga0.9N/In0.02Ga0.98N LD structures using quaternary InAlGaN with variant Al and In compositions as electronic blocking layers are numerically investigated. Varying the aluminum (Al) composition in InAlGaN electronic blocking layer wi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/96949509117509160712
