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Autor:
Ching-Chieh Shih, 石靖節
91
The fabrication of Si1-XGeX MOSFET Abstract We have investigated the nMOSFET and pMOSFET with strain Si1-xGex/ Si heterostructure channels formed. The experimental results promise the potential of SiGe heterostructure MOSFET in CMOS applicati
The fabrication of Si1-XGeX MOSFET Abstract We have investigated the nMOSFET and pMOSFET with strain Si1-xGex/ Si heterostructure channels formed. The experimental results promise the potential of SiGe heterostructure MOSFET in CMOS applicati
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/08347575822759924381
