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pro vyhledávání: '"盧文泰"'
Autor:
Wen-Tai Lu, 盧文泰
94
As CMOS devices are scaled aggressively into nanometer regime, SiO2 gate dielectric is approaching its physical and electrical limits. The primary issue is the intolerably huge leakage current caused by the direct tunneling of carriers throug
As CMOS devices are scaled aggressively into nanometer regime, SiO2 gate dielectric is approaching its physical and electrical limits. The primary issue is the intolerably huge leakage current caused by the direct tunneling of carriers throug
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/59316248403755738419
Autor:
Wen-Tai Lu, 盧文泰
87
Recently, it is reported that more reliable dielectrics grown on the polysilicon can be obtained by using deposited instead of thermally grown dielectrics. Since defects located in the polysilicon are not incorporated into the deposition diel
Recently, it is reported that more reliable dielectrics grown on the polysilicon can be obtained by using deposited instead of thermally grown dielectrics. Since defects located in the polysilicon are not incorporated into the deposition diel
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/76659124467277248855