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pro vyhledávání: '"王派湧"'
Autor:
Pai-Yong Wang, 王派湧
87
The transition of carrier distribution from the strained to relaxed state in In0.2Ga0.8As/GaAs quantum well is studied by capacitance-voltage measurement. There is two-dimensional carrier confinement in the In0.2Ga0.8As quantum well with well
The transition of carrier distribution from the strained to relaxed state in In0.2Ga0.8As/GaAs quantum well is studied by capacitance-voltage measurement. There is two-dimensional carrier confinement in the In0.2Ga0.8As quantum well with well
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/83173881463920739564
Autor:
Pai-Yong Wang, 王派湧
82
We used the metal organic chemical vapor deposition epitaxial in atmospheric pressure to study the growth of GaSb and AlGaSb on GaAs substrates and the current transport properties in GaSb/ AlXGa1-XSb/GaSb structures. In GaSb growth,the growt
We used the metal organic chemical vapor deposition epitaxial in atmospheric pressure to study the growth of GaSb and AlGaSb on GaAs substrates and the current transport properties in GaSb/ AlXGa1-XSb/GaSb structures. In GaSb growth,the growt
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/64341494686902255280