Zobrazeno 1 - 4
of 4
pro vyhledávání: '"王文新 Wang Wen-xin"'
Autor:
陈林森 Chen Lin-sen, 石震武 Shi Zhen-wu, 陈晨 Chen Chen, 徐超 Xu Chao, 霍大云 Huo Da-yun, 邓长威 Deng Chang-wei, 王文新 Wang Wen-xin, 彭长四 Peng Chang-si
Publikováno v:
Chinese Journal of Luminescence. 38:1056-1062
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53b54ed6270cf37af413a1e888542a63
https://doi.org/10.3788/fgxb20173808.1056
https://doi.org/10.3788/fgxb20173808.1056
Autor:
孙庆灵 Sun Qing-ling, 王禄 Wang Lu, 石震武 Shi Zhen-wu, 陈弘 Chen Hong, 田海涛 Tian Hai-tao, 温才 Wen Cai, 王文新 Wang Wen-xin, 高怀举 Gao Huai-ju
Publikováno v:
Chinese Journal of Luminescence. 35:637-642
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2943b81ba23a609f822568283e917cf
https://doi.org/10.3788/fgxb20143506.0637
https://doi.org/10.3788/fgxb20143506.0637
Autor:
宋京 Song Jing, 王文新 Wang Wen-xin, 徐培强 Xu Pei-qiang, 陈耀 Chen Yao, 陈弘 Chen Hong, 马紫光 Ma Zi-guang, 江洋 Jiang Yang, 黎艳 Li Yan
Publikováno v:
Chinese Journal of Luminescence. 32:896-901
GaN is considered as a promising material for high power,high temperature and high frequency microwave applications,due to the wide band gap,high thermal stability and high breakdown voltage.Due to lack of suited homosubstrates,GaN is currently grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e27208231c9d6482bd1a2588380511
https://doi.org/10.3788/fgxb20113209.0896
https://doi.org/10.3788/fgxb20113209.0896
Publikováno v:
Chinese Journal of Luminescence. 32:789-792
Self-assembled GeSi quantum dots(QDs) were grown by gas source molecular beam epitaxy(MBE).Morphology and optical properties of the QDs were studied by atomic force microscopy(AFM) and photoluminescence(PL) spectra.QDs structure grown by gas source M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a475d91dc913f0142a05d49e3d1d51cf
https://doi.org/10.3788/fgxb20113208.0789
https://doi.org/10.3788/fgxb20113208.0789