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pro vyhledávání: '"牛靖華"'
Autor:
Ching-Hua Niu, 牛靖華
100
In recent years, the demand of high-frequency high-power devices has gradually increased. The compound semiconductor of GaN with high electron saturation velocity, good thermal stability, high breakdown voltage has widely used in the fabrica
In recent years, the demand of high-frequency high-power devices has gradually increased. The compound semiconductor of GaN with high electron saturation velocity, good thermal stability, high breakdown voltage has widely used in the fabrica
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/48119045546655849976
