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pro vyhledávání: '"熱物理学的性質"'
Autor:
Matsumoto, Satoshi, Yuge, Sadayoshi, Hayashi, Yoshio, Seino, Yu, Itami, Toshio, Kinoshita, Kyoichi
Publikováno v:
宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals. :55-60
The viscosity and thermal diffusivity of In(x)Ga(1-x)As with various compositions has been measured up to 1,500 K. The double crucible method and its availabilities to measure the high vaporizing materials on both measurement could be verified. The t
Publikováno v:
宇宙開発事業団技術報告 = NASDA Technical Memorandum.
資料番号: AA0045402000
レポート番号: NASDA-TMR-020024E
レポート番号: NASDA-TMR-020024E