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pro vyhledávání: '"游嘉榕"'
Autor:
Yu, Chia-Jung, 游嘉榕
106
Wide bandgap semiconductors are promising materials to replace Si to implement high-voltage and high current power device operating at high temperature. Among those materials, 4H-SiC is the most promising candidate due to its physical proper
Wide bandgap semiconductors are promising materials to replace Si to implement high-voltage and high current power device operating at high temperature. Among those materials, 4H-SiC is the most promising candidate due to its physical proper
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/aw9b45
