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Autor:
Shu-chun Hung, 洪書群
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The dual-gate MOSFETs having two independent gates with the same body P-well layer have been analyzed in this thesis. The characteristics including DC I-V, S-parameters, and the large-signal behavior using load-pull system were measured to r
The dual-gate MOSFETs having two independent gates with the same body P-well layer have been analyzed in this thesis. The characteristics including DC I-V, S-parameters, and the large-signal behavior using load-pull system were measured to r
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/99350619503501282260
