Zobrazeno 1 - 5
of 5
pro vyhledávání: '"気相エピタキシー"'
Autor:
Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Yoda, Shinichi
Publikováno v:
宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :7-12
We have succeeded in scaling up of platy In(0.1)Ga(0.9)As single crystals grown by the traveling liquidus-zone (TLZ) method from 10 to 20 mm in width without deteriorating compositional uniformity. The TLZ method which we have invented for growing ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::ae8ef22777875234efa4380df43b8a0c
http://id.nii.ac.jp/1696/00006084/
http://id.nii.ac.jp/1696/00006084/
Autor:
Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Ogata, Yasuyuki, Kinoshita, Kyoichi, Adachi, Satoshi, Yoda, Shinichi, Arai, Masakazu, Watanabe, Takao, Kondo, Yasuhiro
Publikováno v:
宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :1-6
We grew compositionally homogeneous platy single crystals of In(0.1)Ga(0.9)As composition by the Traveling Liquidus Zone (TLZ) method. We also fabricated In(x)Ga(1-x)As-SQWs on the In(0.1)Ga(0.9)As substrate by the Metal Organic Vapor Epitaxy (MOVPE)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::8fb4aa58c59b35d3d8cf880a2d42359e
http://id.nii.ac.jp/1696/00006083/
http://id.nii.ac.jp/1696/00006083/
Autor:
Yoshida, Kazuki, Tajima, Michio, Sone, Yoshitsugu, Kawakita, Shiro, Niki, Shigeru, Sakurai, Keiichiro
Publikováno v:
第24回宇宙エネルギーシンポジウム 平成16年度 = The Twenty-fourth Space Energy Symposium March 7, 2005. :27-31
Cu(In,Ga)Se2 (CIGS) solar cells have the advantages of low weight and high radiation receptivity, which are quite attractive for the space application. The high radiation tolerance has been explained by the recovery effect during low-temperature anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::94280e8c1e4852de9505f60859bb5471
http://id.nii.ac.jp/1696/00008086/
http://id.nii.ac.jp/1696/00008086/
Publikováno v:
宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report.
For growing compositionally homogeneous alloy crystals, mass balance between segregation and transportation at the growth interface is required, that is, just the same amount of rejected solute by segregation should be transported away from the inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::220c14ba553e065ecbde72c7a3fbfc03
http://id.nii.ac.jp/1696/00002356/
http://id.nii.ac.jp/1696/00002356/
Autor:
Hisada, Yasumasa, Fujita, Tatsuhito
Publikováno v:
宇宙航空研究開発機構特別資料: 平成18年度 宇宙航空研究開発機構 総合技術研究本部 宇宙科学研究本部 研究成果報告書 = JAXA Special Publication: Report on Research Achievements for FY2006 Institute of Space and Astronautical Science, Institute of Aerospace Technology, Japan Aerospace Exploration Agency. :171-172
One of the SSPS Type is the microwave based power transmission (MPT) system: 'M-SSPS' For the M-SSPS, Hi-power and Hi-efficiency semiconductor device are need. In this paper, we describe R & D Program of GaN semiconductor device and the first test re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::541b99c20be25ef66ff1d582835d6c98
http://id.nii.ac.jp/1696/00006015/
http://id.nii.ac.jp/1696/00006015/