Zobrazeno 1 - 2
of 2
pro vyhledávání: '"楊政忠"'
Autor:
Cheng-Chung Yang, 楊政忠
97
In this thesis, metal-oxide-semiconductor capacitors (MOSC) with high-k dielectric HfO2 deposited by metal-organic chemical vapor deposition (MOCVD) were fabricated, and fluorine ions were deliberately implanted into the HfO2 and HfO2/Si inte
In this thesis, metal-oxide-semiconductor capacitors (MOSC) with high-k dielectric HfO2 deposited by metal-organic chemical vapor deposition (MOCVD) were fabricated, and fluorine ions were deliberately implanted into the HfO2 and HfO2/Si inte
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/84315784397468278397
